Large Angle SDD-EDS
This next-generation Silicon Drift Detector (SDD) EDS from JEOL collects X-rays from S/TEM samples at an unprecedented large solid angle of up to 0.98 steadies from a detection area of 100mm2.

Through efficient collection of X-rays at very high count rates, the detector's design speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can
be made at rates ten times faster than with the previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration corrected STEM, fast, efficient atomic resolution EDS analysis is possible.

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